Semiconductor manufacturing device with embedded fluid conduits

ABSTRACT

Provided herein are approaches for forming a conduit embedded within a component of a semiconductor manufacturing device (e.g., an ion implanter) using an additive manufacturing process (e.g., 3-D printing), wherein the conduit is configured to deliver a fluid throughout the component to provide heating, cooling, and gas distribution thereof. In one approach, the conduit includes a set of raised surface features formed on an inner surface of the conduit for varying fluid flow characteristics within the conduit. In another approach, the conduit may be formed in a helical configuration. In another approach, the conduit is formed with a polygonal cross section. In another approach, the component of the ion implanter includes at least one of an ion source, a plasma flood gun, a cooling plate, a platen, and/or an arc chamber base.

CROSS-REFERENCE TO RELATED APPLICATION

This is a continuation application of pending U.S. non-provisionalpatent application Ser. No. 16/540,801, filed Aug. 14, 2019, which is adivisional application of U.S. Pat. No. 10,486,232, filed Apr. 21, 2015,the entire contents of which applications are herein incorporated byreference.

FIELD OF THE DISCLOSURE

The disclosure relates generally to the field of semiconductor devicefabrication and, more particularly, to a semiconductor manufacturingdevice having complex embedded fluid channels formed therein.

BACKGROUND OF THE DISCLOSURE

In semiconductor manufacturing, ion implantation is a common techniquefor altering properties of semiconductor wafers during the production ofvarious semiconductor-based products. Ion implantation may be used tointroduce conductivity-altering impurities (e.g., dopant implants), tomodify crystal surfaces (e.g., pre-amorphization), to created buriedlayers (e.g., halo implants), to create gettering sites forcontaminants, and to create diffusion barriers (e.g., fluorine andcarbon co-implant). Also, ion implantation may be used in non-transistorapplications such as for alloying metal contact areas, in flat paneldisplay manufacturing, and in other surface treatment. All of these ionimplantation applications may be classified, generally, as forming aregion of material property modification.

In a typical doping process, a desired impurity material is ionized, theresulting ions are accelerated to form an ion beam of a prescribedenergy, and the ion beam is directed at a surface of a target substrate,such as a semiconductor-based wafer. Energetic ions in the ion beampenetrate into bulk semiconductor material of the wafer and are embeddedinto a crystalline lattice of the semiconductor material to form aregion of desired conductivity.

An ion implanter usually includes an ion source for generating ions. Ionsources generate a large amount of heat during operation. The heat is aproduct of the ionization of a working gas, which results in ahigh-temperature plasma in the ion source. To ionize the working gas, amagnetic circuit is configured to produce a magnetic field in anionization region of the ion source. The magnetic field interacts with astrong electric field in the ionization region, where the working gas ispresent. The electrical field is established between a cathode, whichemits electrons, and a positively charged anode, and the magnet circuitis established using a magnet and a pole piece made of magneticallypermeable material. The sides and base of the ion source are othercomponents of the magnetic circuit. In operation, the ions of the plasmaare created in the ionization region and are then accelerated away fromthe ionization region by the induced electric field.

The magnet, however, is a thermally sensitive component, particularly inthe operating temperature ranges of a typical ion source. For example,in typical end-Hall ion sources cooled solely by thermal radiation,discharge power is typically limited to about 1000 Watts, and ioncurrent is typically limited to about 1.0 Amps to prevent thermal damageparticularly to the magnet. To manage higher discharge powers, andtherefore higher ion currents, direct anode cooling systems have beendeveloped to reduce the amount of heat reaching the magnet and othercomponents of an ion source.

One such anode cooling system includes coolant lines running to andpumping coolant through a hollow anode. Specifically, material from theion source is removed (e.g., using a subtractive manufacturing process)to form two axial conduits along a length of the sidewall of the ionsource, wherein the axial conduits may be spaced 180 degrees apart.Unfortunately, this axial conduit configuration limits the ability toprovide uniform cooling throughout the ion source.

SUMMARY

In view of the foregoing, it would be advantageous to provide a methodfor forming a conduit embedded within a component of a semiconductormanufacturing device using an additive manufacturing process. Moreover,it would be advantageous to provide such a device and method includingheating or cooling conduits having complex shapes, profiles,cross-sections, surface textures, etc., to provide enhanced heating orcooling of a component when fluid flows through the conduits.

An exemplary method in accordance with the present disclosure mayinclude forming a conduit embedded within a component of a semiconductormanufacturing device using an additive manufacturing process, theconduit including a set of raised features formed on an inner surface ofthe conduit.

An exemplary method in accordance with the present disclosure mayinclude forming a conduit embedded within a component of a semiconductormanufacturing device using an additive manufacturing process, theconduit including a set of raised surface features formed on an innersurface of the conduit. The set of raised surface features may extendinto an interior area of the conduit.

An exemplary semiconductor manufacturing device in accordance with thepresent disclosure may include a conduit embedded within a component ofthe semiconductor manufacturing device, the conduit formed with aplurality of undulations. The ion implanter may further include a set ofraised surface features formed on an inner surface of the conduit, theset of raised surface features extending into an interior area of theconduit.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is an isometric semi-transparent view illustrating a componentof a semiconductor manufacturing device in accordance with the presentdisclosure.

FIG. 1B is a side view illustrating the component of the ion implantershown in FIG. 1A.

FIG. 2A is a cross-sectional view illustrating a conduit within thecomponent of the ion implanter shown in FIG. 1A.

FIG. 2B is a side view illustrating the conduit within the component ofthe ion implanter shown in FIG. 1A.

FIGS. 3A-3D are isometric view illustrating various raised surfacefeatures formed along a surface of the conduit within the component ofthe ion implanter shown in FIG. 1A.

FIG. 4A is an isometric view illustrating another component of asemiconductor manufacturing device in accordance with the presentdisclosure.

FIG. 4B is an isometric semi-transparent view illustrating the componentof the ion implanter shown in FIG. 4A.

FIG. 5A is an isometric view illustrating another component of asemiconductor manufacturing device in accordance with the presentdisclosure.

FIG. 5B is an isometric semi-transparent view illustrating the componentof the ion implanter shown in FIG. 5A.

FIG. 5C is a side view illustrating the component of the ion implantershown in FIG. 5B.

FIG. 6A is an isometric view illustrating another component of asemiconductor manufacturing device in accordance with the presentdisclosure.

FIG. 6B is an isometric semi-transparent view illustrating the componentof the ion implanter shown in FIG. 6A.

FIG. 7A is an isometric semi-transparent view illustrating anothercomponent of a semiconductor manufacturing device in accordance with thepresent disclosure.

FIG. 7B is a side view illustrating the component of the ion implantershown in FIG. 7A.

FIG. 8A is an isometric view illustrating another component of asemiconductor manufacturing device in accordance with the presentdisclosure.

FIG. 8B is an isometric semi-transparent view illustrating the componentof the ion implanter shown in FIG. 8A.

FIG. 9 is a flowchart illustrating an exemplary method according to thepresent disclosure.

The drawings are not necessarily to scale. The drawings are merelyrepresentations, not intended to portray specific parameters of thedisclosure. The drawings are intended to depict typical embodiments ofthe disclosure, and therefore should not be considered as limiting inscope. In the drawings, like numbering represents like elements.

DETAILED DESCRIPTION

A device and method in accordance with the present disclosure will nowbe described more fully hereinafter with reference to the accompanyingdrawings, in which embodiments of the device and method are shown. Thedevice and method, however, may be embodied in many different forms andshould not be construed as being limited to the embodiments set forthherein. Rather, these embodiments are provided so that this disclosurewill be thorough and complete, and will fully convey the scope of thesystem and method to those skilled in the art.

For the sake of convenience and clarity, terms such as “top,” “bottom,”“upper,” “lower,” “vertical,” “horizontal,” “lateral,” and“longitudinal” will be used herein to describe the relative placementand orientation of these components and their constituent parts, eachwith respect to the geometry and orientation of a component of asemiconductor manufacturing device as it appears in the figures. Saidterminology will include the words specifically mentioned, derivativesthereof, and words of similar import.

As used herein, an element or operation recited in the singular andproceeded with the word “a” or “an” should be understood as notexcluding plural elements or operations, unless such exclusion isexplicitly recited. Furthermore, references to “one embodiment” of thepresent disclosure are not intended to be interpreted as excluding theexistence of additional embodiments that also incorporate the recitedfeatures.

As stated above, provided herein are approaches for forming a conduitembedded within a component of a semiconductor manufacturing device(e.g., an ion implanter) using an additive manufacturing process (e.g.,3-D printing), wherein the conduit is configured to deliver a fluidthroughout the component to provide heating, cooling, or gasdistribution thereof. In one approach, the conduit includes a set ofraised surface features formed on an inner surface of the conduit forvarying fluid flow characteristics within the conduit.

An ion implanter disclosed herein may include one or more componentsformed using an additive manufacturing process, such as 3-D printing. Inparticular, the present disclosure relates to a system and process forprinting 3-D features in a layer-by-layer manner from digitalrepresentations of the 3-D component (e.g., additive manufacturing fileformat (AMF) and stereolithography (STL) file format) using one or moreadditive manufacturing techniques. Examples of additive manufacturingtechniques include extrusion-based techniques, jetting, selective lasersintering, powder/binder jetting, electron-beam melting, andstereolithographic processes. For each of these techniques, the digitalrepresentation of the 3-D part is initially sliced into multiplehorizontal layers. For each sliced layer, a tool path is then generated,which provides instructions for the particular additive manufacturingsystem to print the given layer.

In one example, components of the present disclosure may be formed usingan extrusion-based additive manufacturing system in which a 3-Dcomponent may be printed from a digital representation of the 3-Dcomponent in a layer-by-layer manner by extruding a flowable partmaterial. The part material is extruded through an extrusion tip carriedby a print head of the system, and is deposited as a sequence of roadson a platen in planar layers. The extruded part material fuses topreviously deposited part material, and solidifies upon a drop intemperature. The position of the print head relative to the substrate isthen incremented, and the process is repeated to form a 3-D partresembling the digital representation.

In another example, components of the present disclosure may be formedvia fused deposition modeling (FDM), which places the material inlayers. A plastic filament or metal wire may be unwound from a coil andplaced in order to produce a component. FDM further involves a computerprocessing a STL file for the component. During operation, FDM employs anozzle to extrude beads of material. The nozzle may be heated to meltthe material or otherwise make the material more pliable. An extrusionhead may be coupled to the nozzle for depositing the beads. The nozzlemay be movable in horizontal and vertical directions. The nozzle may becontrolled by a robotic mechanism, for example a robotic mechanismhaving a rectilinear design or a delta robot. The extrusion head may bemoved by stepper motors, servo motors, or other types of motors. Thenozzle and extrusion head may be controllable by the computer, whichmay, for example, send control directives to the robotic mechanism andthe motor.

In yet another example, components of the present disclosure are formedusing a selective laser sintering (SLS) process. SLS may involve the useof a laser, for example, a carbon dioxide laser, to fuse particles of amaterial into a desired three-dimensional shape. Example materials mayinclude plastics, metals, and ceramics. SLS may be applied using severalmaterials, for example, using layers of different material or by mixingdifferent materials together. Materials may include polymers such asnylon (neat, glass-filled, or with other fillers) or polystyrene, metalsincluding steel, titanium, alloy mixtures, and composites and greensand. The materials may be in the form of a powder.

SLS may involve using the laser to selectively fuse material by scanningcross-sections generated from a 3-D digital description of the component(for example, from a CAD file) on the surface of a powder bed. Aftereach cross-section is scanned, the powder bed may be lowered based on apredetermined layer thickness, a new layer of material may be applied ontop, and the process is repeated. This may continue until the componentis fully fabricated.

In fabricating 3-D parts by depositing layers of a part material,supporting layers or structures may be built underneath overhangingportions or in cavities of 3-D parts under construction, which are notsupported by the part material itself. A support structure may be builtutilizing the same deposition techniques by which the part material isdeposited. The host computer generates additional geometry acting as asupport structure for the overhanging or free-space segments of the 3-Dpart being formed. The support material is then deposited pursuant tothe generated geometry during the printing process. The support materialadheres to the part material during fabrication, and is removable fromthe completed 3-D part when the printing process is complete.

Referring now to FIGS. 1A-1B, an exemplary embodiment demonstrating aportion of a semiconductor manufacturing device (e.g., an ion implanter10) in accordance with the present disclosure is shown. The ionimplanter 10 includes a conduit 14 embedded within a component 18 (e.g.,an ion source) of the ion implanter 10, the conduit 14 described hereinas being used for distribution of liquid and/or gas throughout thecomponent 18 to provide heating cooling, or gas distribution thereof.

As shown, the conduit 14 is located between an interior surface 22 andan exterior surface 26 of a sidewall 30 of the component 18, andrepresents, for example, embedded cooling channels for an ion source.The conduit 14 may extend along the sidewall 30, taking gas or liquidfrom an inlet 40 located within a base section 42 and deliver it to adistal end 44 of the component 18. The conduit 14 may then take the gasor liquid to an outlet 48 located at a proximal end 52 of the component18. As shown, the conduit 14 may be formed in a helical configuration,and may extend 360° about the component 18. Forming the conduit 14 as ahelix enables the fluid to be more evenly distributed through thecomponent 18, thus reducing the occurrence of disparate temperaturevariants. In other embodiments, the conduit 14 may be formed with aplurality of undulations, curves, etc., or virtually any otherimaginable configuration. In various embodiments, the gas or liquid maybe used as a coolant, examples of which include xenon (Xe), argon (Ar),oil, or water.

As stated above, the component 18 may be formed using an additivemanufacturing process (e.g., 3-D printing) that enables conduitgeometries to be embedded into solid components not feasible usingtraditional subtractive manufacturing techniques, such as drilling. 3-Dprinting allows not only simple, straight, circular channels, butcomplex paths and profiles in any material, which permits idealgeometries to be fabricated.

In the embodiment shown in FIGS. 1A-1B, the complex profiled helicalconfiguration of the conduit 14 can be inlayed within the component 18during formation of the component using an additive manufacturingprocess. The conduit 14 may have a unique cross sectional profile suitedto the desired application, which can include, but is not limited to,heating, cooling, and gas distribution.

One such non-limiting application is an inlayed water-cooling channelwith a pentagonal cross section, as shown in FIGS. 1B and 2A-2B. In thisembodiment, the pentagonal cross section of the conduit 14 is defined bya bottom surface 56, a set of sidewalls 60, 64, and a generallytriangular-shaped top portion 68. The conduit 14 further defines aninterior area 72 in which a fluid flows. The pentagonal cross section ofthe conduit 14 maximizes performance versus, for example, a circularcross sectioned conduit because the flat, thin cross sectional geometryof the sidewalls 60, 64 of the pentagonal conduit 14 provides greaterheat transfer between the plasma within the component 18 and the fluidflowing through the conduit 14. Although shown in this embodiment as apentagon for the sake of illustration, it will be appreciated thatvirtually any imaginable cross section for conduit 14 is possible. Thisincludes, but is not limited to, any regular or irregular polygon, forexample, a triangle, a star, a crescent moon, a trapezoid, a crown, arectangular, a hexagon, etc.

In another non-limiting embodiment, as further shown in FIGS. 1B-2A, thecomponent 18 may include a plurality of conduits. That is, in additionto the conduit 14, the component 18 may further include a circular crosssectioned channel 76 formed in the sidewall 30 for delivering gas to theion source. As shown, the channel 76 follows and extends along a portionof the conduit 14. In exemplary embodiments, the channel 76 is similarlyformed using one or more additive manufacturing processes.

Referring now to FIG. 2B, a set of surface features formed along theconduit 14 using an additive manufacturing process is shown. Inexemplary embodiments, surface features, such as raised surface features80A-N, may be selected to control the flow properties of the fluidthrough the conduit 14, thus effecting thermal performance of a cooledor heated fluid. As shown, the conduit 14 includes the set of raisedsurface features 80A-N formed on an inner surface (e.g., sidewalls 60,64) of the conduit 14, wherein the set of raised surface features 80A-Nextend into the interior area 72 of the conduit 14 to affect flowproperties of a fluid flowing therein. The raised surface features 80A-Nmay be formed along sidewalls 60 and 64, as shown, and/or along thebottom surface 56 in other embodiments.

In exemplary embodiments, the raised surface features 80A-N may beformed during the fabrication of the component 18, e.g., using anadditive manufacturing process. As such, the raised surface features80A-N may include any number of surface feature geometries andcomplexities to generate a desired fluid flow (e.g., turbulent flow orsmooth, laminar flow), which may not be feasible using subtractivemanufacturing techniques. In another embodiment, a plating could beapplied to one or more surfaces of the conduit 14 after fabrication tochange the surface roughness and thus change the flow.

In one non-limiting embodiment, as shown in FIGS. 2B and 3A, the raisedsurface features 80A-N correspond to a plurality of uniformly patternedridges formed on the inner sidewall 60 and are oriented generallyparallel to a flow of fluid through the conduit 14. In this embodiment,each of the plurality of ridges extends into the interior area 72 of theconduit 14, and has a generally rectangular cross section. The ridgescan be either parallel or normal to the direction of flow, and may beused for directing flow, modifying the flow/direction, and changing theeffective surface roughness. Changing the surface roughness may causeeddy's to form, creating a more turbulent flow.

In another non-limiting embodiment, as shown FIG. 3B, the raised surfacefeatures 80A-N correspond to a plurality of uniformly patterned ridgesformed on the inner surface 60 and are configured in an angled orV-shaped pattern. In this embodiment, each of the plurality of ridgesextends into the interior area 72 (FIG. 2B) of the conduit 14, and has agenerally rectangular cross section.

In other non-limiting embodiments, as shown FIGS. 3C-3D, the set ofraised surface features 80A-N corresponds to a plurality protrusionsformed on an inner surface of the conduit 14, for example, sidewall 60.The protrusions may have a semi-circular profile (e.g., as shown in FIG.3C) or a hexagonal profile (e.g., as shown in FIG. 3D). In eachembodiment, the plurality of protrusions extend into the interior area72 (FIG. 2B) of the conduit 14, and are provided to generate turbulencein the fluid within the conduit 14. The protrusions may be used fordirecting flow, modifying the flow/direction, and changing the effectivesurface roughness. Changing the surface roughness may cause eddy's toform, creating a more turbulent flow. Additionally, each protrusion maybe an activation site for a chemical reaction, or a sensing site fordetecting one or more conditions of the fluid.

Referring now to FIGS. 4A-4B, an exemplary embodiment demonstrating aportion of an ion implanter 100 in accordance with another aspect of thepresent disclosure is shown. The ion implanter 100 includes a conduit114 embedded within a component 118, which in this non-limitingembodiment corresponds to a plasma flood gun (PFG).

The PFG may be used within the ion implanter 100 to provide negativeelectrons for neutralizing positive ions in the beam. In particular, thePFG may typically be located near the platen close to the incoming ionbeam just before it makes its impact on a wafer or target substrate. ThePFG includes a plasma chamber 120, wherein a plasma is generated throughionization of atoms of an inert gas such as argon (Ar), xenon (Xe) orkrypton (Kr). Low-energy electrons from the plasma are introduced intothe ion beam and drawn towards the target wafer to neutralize theexcessively positively charged wafer.

As shown in FIG. 4B, the embedded conduit 114 provides thermal controland gas distribution through the component 118. In exemplaryembodiments, the embedded conduit 114 may provide more uniform thermalperformance throughout the component 118, a more ideal gas distribution,a smaller envelope (i.e., smaller volumetric requirements, smallergeometry, smaller occupied volume/space), and a reduced number of parts,which reduces costs and is easier to manufacture. The embedded conduit114 may also reduce potential contamination that results from havingmultiple parts assembled together. Similar to embodiments describedabove, the component 118 and the conduit are formed using an additivemanufacturing processes. In various embodiments, the conduit 114 mayinclude any number of cross sectional profiles and/or raised surfacefeatures, including any of those described above and shown in FIGS.3A-3D.

Referring now to FIGS. 5A-5C, an exemplary embodiment demonstrating aportion of an ion implanter 200 in accordance with another aspect of thepresent disclosure is shown. The ion implanter 200 includes a pluralityof conduits 214 embedded within a component 218, which in thisnon-limiting embodiment corresponds to a cooling plate for use with amagnet.

As discussed above, a magnet may be used within the ion implanter 200 toproduce a magnetic field in an ionization region of the ion source.However, because the magnet is a thermally sensitive component,particularly in the operating temperature ranges of a typical ionsource, a cooling plate may be attached thereto to reduce temperaturesaffecting the magnet.

As shown in FIGS. 5B-5C, the cooling plate (i.e., component 218)includes a plurality of complex conduits 214 embedded within to provideincreased cooling to the magnet. As shown, one or more conduits 214encircle an inner opening 226 of the cooling plate, and extend to anouter perimeter 230. In this embodiment, multiple parallel pathwaysprovide the desired cooling, while also limiting the pressure drop andnet temperature increase of the coolant. Because the cooling plate maybe formed as a single piece using an additive manufacturing processes,suboptimal thermal performance caused by an interface between componentsof the cooling plate is eliminated. Furthermore, the profile of theconduit 214 is not constrained by fabrication and laying of coolingtubes, which limits the number of feasible conduit configurations.

Referring now to FIGS. 6A-6B, an exemplary embodiment demonstrating aportion of an ion implanter 300 in accordance with another aspect of thepresent disclosure is shown. The ion implanter 300 includes a pluralityof conduits 314 embedded within a component 318, which in thisnon-limiting embodiment corresponds to an arc chamber base.

The arc chamber base may be in contact with an indirectly heated cathode(IHC) arc chamber defining a set of electrically conductive (e.g.tungsten) chamber walls 334 and an ionization zone within which energyis imparted to a dopant feed gas to generate associated ions. Differentfeed gases are supplied to the ion source chamber through the pluralityof conduits 314 to obtain plasma used to form ion beams havingparticular dopant characteristics. For example, the introduction of H₂,BF₃, GeF₄, PH₃, and AsH₃ as the dopant gas at relatively high chambertemperatures are broken down into mono-atoms having low, medium and highimplant energies. These ions are formed into a beam, which then passesthrough a source filter (not shown).

As shown in FIG. 6B, the conduits 314 may be embedded into the arcchamber base (i.e., component 318) to provide thermal control and gasdistribution therein. The conduits 314 provide a more uniform thermalperformance due to a more ideal gas distribution, particularly formaterials difficult to machine using subtractive manufacturingtechniques. The conduits 314 also provide a small envelope and requirefewer overall parts, which reduces cost and is easier to manufacture.Similar to embodiments described above, the component 318, including theconduits 314, may be formed using an additive manufacturing processes.In some embodiments, the conduit 314 may include any number of crosssectional profiles and/or raised surface features, including any ofthose described above and shown in FIGS. 3A-3D.

Referring now to FIGS. 7A-7B, an exemplary embodiment demonstrating aportion of an ion implanter 400 in accordance with another aspect of thepresent disclosure is shown. The ion implanter 400 includes a pluralityof conduits 414 embedded within a component 418, which in thisnon-limiting embodiment corresponds to a platen used to hold a wafer.

As shown, the conduit 414 may be formed on an interior surface 438 ofthe component 418, and represents, e.g., an embedded cooling channel.The conduit 414 may take gas or liquid from an inlet 440 and deliver itthrough the component 418 to an outlet 448. As shown in thisnon-limiting embodiment, the conduit 414 may be formed generally as acoil. Forming the conduit 14 in such a configuration enables the fluidto be more evenly distributed throughout the component 418, thusproviding enhanced thermal management.

Similar to embodiments described above, the component 418 may be formedusing an additive manufacturing processes. In the embodiment shown inFIGS. 7A-7B, the complex coil configuration of conduit 414 can be formedat the same time as the component 418, for example, as a single piece.In some embodiments, the conduit 414 may include any number of crosssectional profiles and/or raised surface features, including any ofthose described above and shown in FIGS. 3A-3D.

Referring now to FIGS. 8A-8B, an exemplary embodiment demonstrating aportion of an ion implanter 500 in accordance with another aspect of thepresent disclosure is shown. The ion implanter 500 includes a pluralityof conduits 514A-D embedded within a component 518, which in thisnon-limiting embodiment corresponds to an arm or connecting element.

As shown, complex profiled conduits 514A-D may be embedded into parts orpieces of a mechanism to allow thermal management, gas distribution, orcable management thereof in moving components, while avoiding the needto run additional tubing. In this example, the conduit 514-A mayrepresent a cable conduit that extends from a proximal end 546 to adistal end 552 of the component 518. Conduit 514-B may represent a gasor thermal management conduit that also extends from the proximal end546 to the distal end 552 of the component 518. Meanwhile, the conduits514C-D may represent gas or thermal management conduits extendingpartially along the component 518 from the distal end 552 to respectiveexits through a sidewall 558. Similar to embodiments described above,the component 518, including each of the conduits 514A-D, may be formedusing an additive manufacturing process. In some embodiments, theconduits 514A-D may include any number of cross sectional profilesand/or raised surface features, including any of those described aboveand shown in FIGS. 3A-3D.

Referring now to FIG. 9, a flow diagram illustrating an exemplary method600 for forming a conduit embedded within a component of a semiconductormanufacturing device in accordance with the present disclosure is shown.The method 600 will be described in conjunction with the representationsshown in FIGS. 1-8.

Method 600 includes forming a conduit embedded within a component of asemiconductor manufacturing device (e.g., an ion implanter) using anadditive manufacturing process, as shown in block 601. In someembodiments, the conduit may be embedded within the component by one of:fused deposition modeling, an extrusion-based process, jetting,selective laser sintering, powder/binder jetting, electron-beam melting,and a stereolithographic process. In some embodiments, the conduit maybe formed with a plurality of undulations, for example, in a helicalconfiguration. In some embodiments, the conduit may be formed with asubstantially polygonal cross section. In some embodiments, the conduitmay be formed with a substantially pentagonal cross section. In someembodiments, a plurality of conduits may be formed within the component,wherein at least one of the plurality of conduits may have asubstantially circular cross section. Method 600 further includesforming a set of raised surface features on an inner surface of theconduit using an additive manufacturing process, as shown in block 603.In some embodiments, the set of raised surface features may extend intoan interior area of the conduit. In some embodiments, the set of raisedfeatures may include at least one of a plurality of protrusions and/or aplurality of ridges.

In view of the foregoing, at least the following advantages are achievedby the embodiments disclosed herein. Firstly, the conduits disclosedherein are formed in a solid object using an additive manufacturingprocess. As such, the conduits can be formed with complex shapes,profiles, and cross-sections that cannot be achieved using conventionalsubtractive manufacturing techniques (e.g., drilling). As a result,components may be designed closer to ideal geometries, which providesimproved thermal performance of fluid systems. Secondly, additivemanufacturing of the conduits disclosed herein enables more significantcontrol of the surface finish and features thereof, which influences theflow properties of a fluid flowing therein. According to the disclosedembodiments, the internal surface features of the conduits can be formedduring the fabrication of the component. These surface features can bevaried to achieve desired flow characteristics (e.g., turbulent flow),and are not feasible using subtractive manufacturing techniques.

While certain embodiments of the disclosure have been described herein,it is not intended that the disclosure be limited thereto, as it isintended that the disclosure be as broad in scope as the art will allowand that the specification be read likewise. Therefore, the abovedescription should not be construed as limiting, but merely asexemplifications of particular embodiments. Those skilled in the artwill envision other modifications within the scope and spirit of theclaims appended hereto.

What is claimed is:
 1. An ion source, comprising: a tubular componentincluding a conduit embedded between an interior surface and an exteriorsurface of a sidewall, wherein the conduit includes a set of raisedfeatures formed on an inner surface of the conduit; and a base sectionincluding an inlet and an outlet, wherein the conduit is connected withthe inlet and the outlet, and wherein the inlet, the outlet, and theconduit operate to deliver a cooling fluid.
 2. The ion source of claim1, the set of raised features extending into an interior area of theconduit.
 3. The ion source of claim 1, the set of raised featuresincluding at least one of: a plurality of protrusions, and a pluralityof ridges.
 4. The ion source of claim 1, the conduit arranged as a helixextending around an entire circumference of the sidewall.
 5. The ionsource of claim 1, wherein the conduit has a pentagonal cross-sectiondefined by a bottom surface, a set of sidewalls, and a substantiallytriangular-shaped top portion.
 6. The ion source of claim 1, furthercomprising a second conduit embedded in the sidewall, the second conduitdisposed adjacent the conduit, wherein the second conduit has a circularcross-section.
 7. The ion source of claim 5, wherein the second conduitis arranged as a helix extending around an entire circumference of thesidewall.
 8. A semiconductor manufacturing device, comprising: a tubularcomponent including a conduit embedded between an interior surface andan exterior surface of a sidewall, wherein the conduit includes a set ofraised features formed on an inner surface of the conduit; and a basesection coupled to the tubular component, the base section including aninlet and an outlet, wherein the conduit is connected with the inlet andthe outlet, and wherein the inlet, the outlet, and the conduit operateto deliver a cooling fluid.
 9. The semiconductor manufacturing device ofclaim 8, wherein the set of raised features extend into an interior areaof the conduit, and wherein the set of raised features include at leastone of: a plurality of protrusions, and a plurality of ridges.
 10. Thesemiconductor manufacturing device of claim 8, wherein the conduit has apentagonal cross-section defined by a bottom surface, a set ofsidewalls, and a substantially triangular-shaped top portion.
 11. Thesemiconductor manufacturing device of claim 8, the conduit arranged as ahelix extending around an entire circumference of the sidewall.
 12. Thesemiconductor manufacturing device of claim 8, further comprising asecond conduit embedded in the sidewall, the second conduit disposedadjacent the conduit.
 13. The semiconductor manufacturing device ofclaim 12, wherein the second conduit has a circular cross-section. 14.The semiconductor manufacturing device of claim 12, wherein the secondconduit is arranged as a helix extending around an entire circumferenceof the sidewall.
 15. An ion source, comprising: a tubular componentincluding a conduit embedded between an interior surface and an exteriorsurface of a sidewall, wherein the conduit includes a set of raisedfeatures formed on an inner surface of the conduit, the set of raisedfeatures extending into an interior area of the conduit; and a basesection coupled to the tubular component, the base section including aninlet and an outlet, wherein the conduit is fluidly connected with theinlet and the outlet, and wherein the inlet, the outlet, and the conduitoperate to deliver a cooling fluid through the tubular component and thebase section.
 16. The ion source of claim 15, the set of raised featuresextending from the set of sidewalls.
 17. The ion source of claim 15, theset of raised features including at least one of: a plurality ofprotrusions, and a plurality of ridges.
 18. The ion source of claim 15,the conduit arranged as a helix extending around an entire circumferenceof the sidewall.
 19. The ion source of claim 15, further comprising asecond conduit embedded in the sidewall, the second conduit disposedadjacent the conduit, wherein the second conduit has a circularcross-section, and wherein the second conduit is arranged as a helixextending around an entire circumference of the sidewall.
 20. The ionsource of claim 15, wherein the conduit has a pentagonal cross-sectiondefined by a bottom surface, a set of sidewalls, and a substantiallytriangular-shaped top portion.